LAAS CNRS – France

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Research focus:

Arsenide-based (GaInAs(N,Bi)/Ga(Al)As) quantum structures and devices, and low bandgap nanowires (GaSb, InAs, InSb on flat and patterned Si substrates) for photonics, nanoelectronics, photovoltaics, thermoelectrics and spintronics.

System:

MBE 412 III (Ga,Al,In)-V (As,N,Sb,Bi) cluster

+ Dr. Alexandre Arnoult (Ingénieur de Recherche)
+ Dr. Sébastien Plissard (Chargé de Recherche)
+ Dr. Chantal Fontaine (Directrice de Recherche)